One minute knowledge

Doping density becoming constant

non-ionization of dopant impurities under cryogenic conditions

Conductivity becomes constant with temperature variation

Fermi level pinning

Fortran

Cobol

Ada Lovelace

Grace Hopper

Au

Cd

Zn

Si

lightly doping base & emitter

heavily doping emitter and lightly doping base and keeping basewidth small

High doping of emitter

high doping of base& collector and keeping base width small

There are relativistic effects on carriers

Electrons and holes exist in solids

There are internal forces acting on carriers

Newton’s laws of motion is not valid always

Hetro junction of GaAs and GaAlAs

n-GaAs

P and n type GaAs

Specially doped silicon