One minute pleasure of Knowledge

n-GaAs

Hetro junction of GaAs and GaAlAs

P and n type GaAs

Specially doped silicon

Fortran

Grace Hopper

Ada Lovelace

Cobol

Cd

Au

Si

Zn

There are relativistic effects on carriers

Newton’s laws of motion is not valid always

There are internal forces acting on carriers

Electrons and holes exist in solids

Doping density becoming constant

Fermi level pinning

non-ionization of dopant impurities under cryogenic conditions

Conductivity becomes constant with temperature variation

High doping of emitter

heavily doping emitter and lightly doping base and keeping basewidth small

lightly doping base & emitter

high doping of base& collector and keeping base width small